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| IIIIIIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII * High Current Capability -- IC Continuous = 60 Amperes * DC Current Gain -- hFE = 15 - 100 @ IC = 50 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc . . . designed for use in high-power amplifier and switching circuit applications, (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. High-Current Complementary Silicon Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 2 PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Emitter Current -- Continuous Base Current -- Continuous Collector Current -- Continuous Emitter-Base Voltage Collector Base Voltage Collector-Emitter Voltage Characteristic Rating 360 330 150 210 270 90 30 0 0 Symbol Symbol TJ, Tstg VCBO VCEO VEBO RJC PD IC IE IB 40 Figure 1. Power Derating 80 120 160 TC, CASE TEMPERATURE (C) MJ14001 60 60 - 65 to + 200 0.584 Max 300 17 75 15 60 5 MJ14002 MJ14003 80 80 Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C 200 240 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60 - 80 VOLTS 300 WATTS MJ14002* PNP MJ14001 MJ14003* *Motorola Preferred Device CASE 197A-05 TO-204AE (TO-3) Order this document by MJ14001/D NPN 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II II I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJ14002 MJ14001 MJ14003 (1) Pulse Test: Pulse Width = 300 s, Duty Cycle ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Base-Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 5.0 Adc) (IC = 60 Adc, IB = 12 Adc) Collector-Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 5.0 Adc) (IC = 60 Adc, IB = 12 Adc) DC Current Gain (1) (IC = 25 Adc, VCE = 3.0 V) (IC = 50 Adc, VCE = 3.0 V) (IC = 60 Adc, VCE = 3.0 V) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 V) (VCE = 80 Vdc, VBE(off) = 1.5 V) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) 2 100 70 50 30 20 1.0 0.7 0.5 0.3 0.2 IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 3.0 2.0 0.1 1.0 TC = 25C WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT Figure 2. Maximum Rated Forward Biased Safe Operating Area 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Characteristic MJ14001 MJ14002, MJ14003 dc 5.0 ms v 2%. 1.0 ms MJ14001 MJ14002, MJ14003 MJ14001 MJ14402, MJ14003 MJ14001 MJ14002, MJ14003 MJ14001 MJ14002, MJ14003 1.0 s 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 13. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Motorola Bipolar Power Transistor Device Data VCEO(sus) VCE(sat) VBE(sat) Symbol ICBO ICEO IEBO ICEX Cob hFE Min 30 15 5 60 80 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2000 Max -- 100 -- 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 2.5 3 -- -- 2 3 4 Unit Vdc Vdc Vdc mA mA mA mA pF -- MJ14002 MJ14001 MJ14003 TYPICAL ELECTRICAL CHARACTERISTICS NPN MJ14002 300 200 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 3.0 0.7 1.0 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) 50 70 VCE = 3.0 V TJ = - 55C TJ = 25C TJ = 150C 300 200 100 70 50 30 20 10 7.0 5.0 3.0 0.7 1.0 5.0 7.0 10 2.0 3.0 20 IC, COLLECTOR CURRENT (AMPS) 30 50 70 VCE = 3.0 V TJ = - 55C TJ = 25C TJ = 150C PNP MJ14001, MJ14003 Figure 3. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.8 2.4 2.0 1.6 IC = 25 A 1.2 0.8 0.4 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (AMPS) 5.0 7.0 10 IC = 10 A TJ = 25C IC = 60 A 2.8 2.4 2.0 1.6 Figure 4. DC Current Gain TJ = 25C IC = 60 A IC = 25 A 1.2 0.8 0.4 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (AMPS) 5.0 7.0 10 IC = 10 A Figure 5. Collector Saturation Region 2.8 2.4 V, VOLTAGE (VOLTS) 2.0 1.6 1.2 0.8 0.4 0 0.7 1.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 50 70 0.4 0 0.7 1.0 TJ = 25C V, VOLTAGE (VOLTS) 2.8 2.4 2.0 1.6 1.2 0.8 Figure 6. Collector Saturation Region TJ = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 50 70 Figure 7. "On" Voltages Figure 8. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 MJ14002 MJ14001 MJ14003 1.0 0.7 0.5 0.3 t, TIME ( s) 0.2 td 0.1 0.07 0.05 0.03 0.02 0.01 0.7 1.0 MJ14002 (NPN) MJ14001, MJ14003 (PNP) 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (AMPS) 50 70 tr t, TIME ( s) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.04 0.7 1.0 tf 4.0 3.0 2.0 ts MJ14002 (NPN) MJ14001, MJ14003 (PNP) 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50 70 Figure 9. Turn-On Switching Times Figure 10. Turn-Off Switching Times + 2.0 V 0 10000 7000 5000 C, CAPACITANCE (pF) 3000 2000 Cib 1000 700 500 300 200 100 1.0 Cob TJ = 25C MJ14002 (NPN) MJ14001, MJ14003 (PNP) Cib Cob 0 -12 V tr 20 ns -12 V VCC - 30 V RL RB TO SCOPE tr 20 ns 10 to 100 s DUTY CYCLE 2.0% +10 V VCC - 30 V RL TO SCOPE tr 20 ns RB tr 20 ns 10 to 100 s VBB DUTY CYCLE 2.0% + 7.0 V 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. Figure 11. Capacitance Variation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 12. Switching Test Circuit 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 RJC(t) = r(t) RJC RJC = 0.584C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) 0.1 0.07 0.05 0.03 0.02 0.05 0.02 0.01 SINGLE PULSE 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.02 0.03 2.0 3.0 5.0 7.0 10 t, TIME (ms) 20 30 50 70 100 200 300 500 700 1000 2000 Figure 13. Thermal Response 4 Motorola Bipolar Power Transistor Device Data MJ14002 MJ14001 MJ14003 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K M 0.30 (0.012) L G 1 TQ M Y M -Y- H B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE (TO-3) ISSUE J Motorola Bipolar Power Transistor Device Data 5 MJ14002 MJ14001 MJ14003 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJ14001/D* MJ14001/D |
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